EPA060B-70

Excelics DATA SHEET Features NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +26dBm TYPICAL OUTPUT POWER 9.0dB TYPICAL POWER GAIN AT 12 GHZ 0.4 dB TYPICAL NOISE FIGURE AT 2GHz 20 dB TYPICAL ASSOCIATED GAIN AT 2 GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY EPA060B-70 High Efficiency Heterojunction Power FET  '     0LQ $OO /HDGV 6 6 * Applications High Dynamic Range LNA DC to 18 GHz  All Dimensions In mils. ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE IP3 NF GA Idss Gm Vp BVgd BVgs PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz Gain at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz Power Added Efficiency at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz +5dBm POUT/Tone (5V/50mA) f=2GHz (5V/90mA) Noise Figure (5V/50mA) f=2GHz (5V/90mA) Associated Gain (5V/50mA) f=2GHz (5V/90mA) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=2.0mA -10 -6 MIN 24.0 17.0 7.0 TYP 26.0 25.5 19.0 9.0 55 45 28 31 0.4 0.6 20.0 20.0 180 190 -1.0 -15 -14 175 * o MAX  UNIT dBm dB % dBm dB dB 110 120 250 mA mS -2.5 V V V C/W Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance Rth * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Ts...