EPB018A7-70

Excelics EPB018A5/A7/A9-70 DATA SHEET Super Low Noise High Gain Heterojunction FET NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY O  '     0LQ $OO /HDGV 6 6 * All Dimensions In mils. ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS NF PARAMETERS/TEST CONDITIONS Noise Figure, f=12GHz Vds=2V, Ids=15mA Ga P1dB G1dB Idss Gm Vp BVgd BVgs Rth * MIN  TYP 0.50 0.65 0.95 13.0 12.5 11.5 15.0 15.0 14.0 11.5 45 90 -0.8 MAX 0.60 0.80 1.20 UNIT dB Associated Gain, f=12GHz Vds=2V, Ids=15mA Output Power at 1dB Compression Vds=3V, Ids=25mA Gain at 1dB Compression Vds=3V, Ids=25mA Saturated Drain Current Transconductance Pinch-off Voltage EPB018A5-70 EPB018A7-70 EPB018A9-70 EPB018A5-70 EPB018A7-70 EPB018A9-70 f=12GHz f=18GHz f=12GHz f=18GHz 11.5 11.0 10.5 dB dBm dB 80 mA mS -2.5 V V V o Vds=2V, Vgs=0V 15 50 Vds=2V, Vgs=0V Vds=2V, Ids=1.0mA Drain Breakdown Voltage Igd=10uA Source Breakdown Voltage Igs=10uA Thermal Resistance -3 -3 -6 -6 480* C/W Overall Rth depands on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 5V 4V Gate-Source Voltage -3V -2V Drain Current Idss 60mA Forward Gate Current 2mA 0.3mA Input Power 12dBm @1dB Compres...