Document
DS2106SY
DS2106SY
Rectifier Diode
Replaces October 2001 version, DS4182-5.0 DS4182-5.1 December 2001
FEATURES
s Double Side Cooling s High Surge Capability
KEY PARAMETERS VRRM 4000V IF(AV) 3830A IFSM 62500A
APPLICATIONS
s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V Conditions
DS2106SY40 4000 DS2106SY39 3900 DS2106SY38 3800 DS2106SY37 3700 DS2106SY36 3600 DS2106SY35 3500 Lower voltage grades available.
VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2106SY37 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DS2106SY
CURRENT RATINGS
Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 3830 6016 5597 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 2525 3966 3421 A A A
Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 2850 4475 4190 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 1920 3014 2500 A A A
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DS2106SY
SURGE RATINGS
Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase =150oC VR = 0 Max. 50.0 12.5 x 106 62.5 1.96 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 43.0kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 38.0 150 150 47.0
o
Min. dc Anode dc -
Max. 0.0095 0.019 0.019 0.002 0.004 160
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DS2106SY
CHARACTERISTICS
Symbol VFM IRM QS Irr VTO rT Parameter Forward voltage Peak reverse current Total stored charge Peak reverse recovery current Threshold voltage Slope resistance Conditions At 3000A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 2000A, dIRR/dt = 3A/µs Tcase = 150˚C, VR = 100V At Tvj = 150˚C At Tvj = 150˚C Min. Max. 1.15 250 5000 150 0.75 0.118 Units V mA µC A V mΩ
CURVES
5000 Measured under pulse conditions
10000
4000
Instantaneous forward current, IF - (A)
8000
3000
Mean power dissipation - (W)
6000
Tj = 150˚C 2000 Tj = 25˚C
4000
1000
2000 dc Half wave 3 phase 6 phase
0 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
00
Instantaneous forward voltage, VF -(V)
2000 4000 Mean forward current, IF(AV) - (A)
6000
Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF Where
Fig.3 Dissipation curves A = –0.15357 B = 0.177571 C = 0.000179 D = –0.01294 these values are valid for Tj = 125˚C for IF 500A to 5000A
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DS2106SY
100000
IF QS dIF/dt IRM
Conditions: Tj = 150˚C VR = 100V IF = 2000A
1000
Conditions: Tj = 150˚C VR = 100V IF = 2000A
10000
1000 0.1
Reverse recovery current, Irr - (A)
Stored charge, QS - (µC)
100
1.0 10 Rate of decay of forward current, dIF/dt - (A/µs)
100
10 0.1
1.0 10 Rate of decay of forward current, dIF/dt - (A/µs)
100
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
120 I2t = Î2 x t 2 100
Peak half sine forward current - (kA)
0.1
Anode side cooled
80
12
Thermal impedance - (˚C/W)
0.01 Double side cooled
60 I2t
10
I2t value - (A2s x 106)
40
8
0.001
20
6
Conduction
Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 Single side 0.019 0.020 0.0207 0.0234
0 1 ms
10
1
2 3
5
10
20
4 50
d.c. Halfwave 3 phase 120˚ 6 phase 60˚
0.0001 0.001
0.01
Cycles at 50Hz Duration
0.1 1 Time - (s)
10
100
Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 150˚C)
Fig.7 Maximum (limit) transient thermal impedance junction to case
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DS2106SY
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated othe.