DatasheetsPDF.com

DS2106SY Dataheets PDF



Part Number DS2106SY
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Rectifier Diode
Datasheet DS2106SY DatasheetDS2106SY Datasheet (PDF)

DS2106SY DS2106SY Rectifier Diode Replaces October 2001 version, DS4182-5.0 DS4182-5.1 December 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 4000V IF(AV) 3830A IFSM 62500A APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DS2106SY40 4000 DS2106SY39 3900 DS2106SY38 3800 DS2106SY37 3700 DS2106SY36 3600 DS2106SY35 3500 L.

  DS2106SY   DS2106SY


Document
DS2106SY DS2106SY Rectifier Diode Replaces October 2001 version, DS4182-5.0 DS4182-5.1 December 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 4000V IF(AV) 3830A IFSM 62500A APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DS2106SY40 4000 DS2106SY39 3900 DS2106SY38 3800 DS2106SY37 3700 DS2106SY36 3600 DS2106SY35 3500 Lower voltage grades available. VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2106SY37 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2106SY CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 3830 6016 5597 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 2525 3966 3421 A A A Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 2850 4475 4190 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 1920 3014 2500 A A A 2/7 www.dynexsemi.com DS2106SY SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase =150oC VR = 0 Max. 50.0 12.5 x 106 62.5 1.96 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 43.0kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 38.0 150 150 47.0 o Min. dc Anode dc - Max. 0.0095 0.019 0.019 0.002 0.004 160 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/7 www.dynexsemi.com DS2106SY CHARACTERISTICS Symbol VFM IRM QS Irr VTO rT Parameter Forward voltage Peak reverse current Total stored charge Peak reverse recovery current Threshold voltage Slope resistance Conditions At 3000A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 2000A, dIRR/dt = 3A/µs Tcase = 150˚C, VR = 100V At Tvj = 150˚C At Tvj = 150˚C Min. Max. 1.15 250 5000 150 0.75 0.118 Units V mA µC A V mΩ CURVES 5000 Measured under pulse conditions 10000 4000 Instantaneous forward current, IF - (A) 8000 3000 Mean power dissipation - (W) 6000 Tj = 150˚C 2000 Tj = 25˚C 4000 1000 2000 dc Half wave 3 phase 6 phase 0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 00 Instantaneous forward voltage, VF -(V) 2000 4000 Mean forward current, IF(AV) - (A) 6000 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF Where Fig.3 Dissipation curves A = –0.15357 B = 0.177571 C = 0.000179 D = –0.01294 these values are valid for Tj = 125˚C for IF 500A to 5000A 4/7 www.dynexsemi.com DS2106SY 100000 IF QS dIF/dt IRM Conditions: Tj = 150˚C VR = 100V IF = 2000A 1000 Conditions: Tj = 150˚C VR = 100V IF = 2000A 10000 1000 0.1 Reverse recovery current, Irr - (A) Stored charge, QS - (µC) 100 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 100 10 0.1 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 100 Fig.4 Total stored charge Fig.5 Maximum reverse recovery current 120 I2t = Î2 x t 2 100 Peak half sine forward current - (kA) 0.1 Anode side cooled 80 12 Thermal impedance - (˚C/W) 0.01 Double side cooled 60 I2t 10 I2t value - (A2s x 106) 40 8 0.001 20 6 Conduction Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 Single side 0.019 0.020 0.0207 0.0234 0 1 ms 10 1 2 3 5 10 20 4 50 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.0001 0.001 0.01 Cycles at 50Hz Duration 0.1 1 Time - (s) 10 100 Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 150˚C) Fig.7 Maximum (limit) transient thermal impedance junction to case 5/7 www.dynexsemi.com DS2106SY PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated othe.


DS21054E DS2106SY DS2107SY


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)