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DS402ST Dataheets PDF



Part Number DS402ST
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Rectifier Diode
Datasheet DS402ST DatasheetDS402ST Datasheet (PDF)

DS402ST DS402ST Rectifier Diode Replaces March 1998 version, DS4183-2.3 DS4183-3.0 January 2000 APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers KEY PARAMETERS VRRM 1400V IF(AV) 505A IFSM 5600A FEATURES s Double Side Cooling s High Surge Capability VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DS402ST14 1400 DS402ST13 1300 DS402ST12 1200 DS402ST11 1100 DS402ST10 1000 DS402ST09 900 Lower voltage g.

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DS402ST DS402ST Rectifier Diode Replaces March 1998 version, DS4183-2.3 DS4183-3.0 January 2000 APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers KEY PARAMETERS VRRM 1400V IF(AV) 505A IFSM 5600A FEATURES s Double Side Cooling s High Surge Capability VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DS402ST14 1400 DS402ST13 1300 DS402ST12 1200 DS402ST11 1100 DS402ST10 1000 DS402ST09 900 Lower voltage grades available. VRSM = VRRM + 100V Outline type code: T. See Package Details for further information. CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 505 793 640 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 365 573 390 A A A 1/7 DS402ST SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 175oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 175oC VR = 0 Max. 4.5 101 x 103 5.6 155 x 103 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 4.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 3.5 175 200 5.0 o Min. dc Anode dc - Max. 0.08 0.16 0.16 0.02 0.04 185 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN CHARACTERISTICS Symbol VFM IRRM VTO rT Parameter Forward voltage Peak reverse current Threshold voltage Slope resistance Conditions At 450A peak, Tcase = 25oC At VRRM, Tcase = 175oC At Tvj = 175˚C At Tvj = 175˚C Min. Max. 1.25 15 0.81 0.84 Units V mA V mΩ 2/7 DS402ST CURVES 2000 Measured under pulse conditions Instantaneous forward current IF - (A) 1500 Tj = 25˚C Tj = 175˚C 1000 500 0 0.50 1.00 1.50 2.00 Instantaneous forward voltage VF - (V) Fig. 1 Maximum (limit) forward characteristics 2.50 3/7 DS402ST 1200 dc Half wave 1000 3 phase 800 Mean power dissipation - (W) 6 phase 600 400 200 0 0 200 400 600 Mean forward current IF(AV) - (A) FIG 2 DISSIPATION CURVES Fig. 2 Dissipation curves 800 4/7 DS402ST 12 Peak half sine forward current - (kA) I2t = Î2 x t 2 10 100 8 90 I2t value - (A2s x 103) 6 2 80 4 It 70 2 60 0 1 ms 10 1 2 3 5 10 20 50 50 Cycles at 50Hz Duration Fig. 3 Surge (non-repetitive) forward current vs time (with 50% VRRM, Tcase = 175˚C) 1.0 Conduction Effective thermal resistance Junction to case ˚C/W Double side Sin.


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