DS9502

DS9502 ESD Protection Diode www.dalsemi.com SPECIAL FEATURES § Zener characteristic with voltage snap–back to protect against ESD hits § High avalanche voltage, low leakage and low capacitance avoid signal attenuation SYMBOL AND CONVENTIONS C IC VCA A § Compatible to all 5V logic families § Space saving, low inductance TSOC surface mount package § Symmetric dual–port bondout to maximize energy dissipation in protection device § Industrial temperature range 3 4 TOP VIEW 3.7 X 4.0 X 1.5 mm See Mech. Drawings Section PACKAGE OUTLINE TSOC SURFACE MOUNT PACKAGE 1 2 6 5 SIDE VIEW ORDERING INFORMATION DS9502P 6-lead TSOC package DESCRIPTION This DS9502 was designed as an additional ESD protection for SRAM–based battery–buffered portable memory modules. The memory chips used for these modules have already a strong ESD–protection structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than 27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the DS9502 will eventually fail “short” thus preventing further damage. During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage is maintained, the device will stay in the “snapback mode”. If the voltage or the cur...