HiPerFRED Epitaxial Diode with common cathode and soft recovery
DSEC 29-02A DSEC 29-02AS
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
IFAV = 2x15 A VRRM = 200 V ...
Description
DSEC 29-02A DSEC 29-02AS
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
IFAV = 2x15 A VRRM = 200 V trr = 25 ns
TO-220 AC
A C A
VRSM V 200 200
VRRM V 200 200
Type
DSEC 29-02A DSEC 29-02AS
C (TAB)
TO-263
A A C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 150°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive
Maximum Ratings 35 15 140 0.8 0.3 -55...+175 175 -55...+150 A A A mJ A °C °C °C W Nm lb.in. g
Features International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
TC = 25°C mounting torque typical
95 0.45...0.55 4...5 2/4
Symbol IR ①
Conditions TVJ = 25°C; VR = VRRM TVJ = 150°C; VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C
Characteristic...
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