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04M0WC Datasheet, Equivalent, DIODE ARRAY.100V 300mA MONOLITHIC DIODE ARRAY 100V 300mA MONOLITHIC DIODE ARRAY |
| Part | 04M0WC |
|---|---|
| Description | 100V 300mA MONOLITHIC DIODE ARRAY |
| Feature | 04M0 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION 100V 300mA MONOLITHIC DIODE ARRAY 5 • • • • FEATURES: INDIVIDUAL DIODES EQUIVALENT TO 1N4148 Vf MATCH TO 5 mV at 10 mA ULTRA-HIGH SPEED SWITCHING QUAD ISOLATED DIODES C C .049" Absolute Maximum Ratings: Symbol Parameter Limit 100 300 500 -65 to +150 -65 to +200 Unit Vdc mAdc mAdc °C °C VBR(R) *1 *2 Reverse Breakdown Voltage IO *1 Continuous Forward Current IFSM *1 Peak Surge Current (tp= 1/120 s) Top Operating Junction Temperature Range Tstg Storage Temperature Range NOT. |
| Manufacture | Microsemi Corporation |
| Datasheet |
| Part | 04M0WC |
|---|---|
| Description | 100V 300mA MONOLITHIC DIODE ARRAY |
| Feature | 04M0 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION 100V 300mA MONOLITHIC DIODE ARRAY 5 • • • • FEATURES: INDIVIDUAL DIODES EQUIVALENT TO 1N4148 Vf MATCH TO 5 mV at 10 mA ULTRA-HIGH SPEED SWITCHING QUAD ISOLATED DIODES C C .049" Absolute Maximum Ratings: Symbol Parameter Limit 100 300 500 -65 to +150 -65 to +200 Unit Vdc mAdc mAdc °C °C VBR(R) *1 *2 Reverse Breakdown Voltage IO *1 Continuous Forward Current IFSM *1 Peak Surge Current (tp= 1/120 s) Top Operating Junction Temperature Range Tstg Storage Temperature Range NOT. |
| Manufacture | Microsemi Corporation |
| Datasheet |
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