AVD002F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG(B)
A
DESCRIPTION:
The ASI AVD002F is Designed for
C ...
AVD002F
NPN SILICON RF POWER
TRANSISTOR
PACKAGE STYLE .250 2L FLG(B)
A
DESCRIPTION:
The ASI AVD002F is Designed for
C B
.100 X 45° ØD .088 x 45° CHAMFER
FEATURES:
Omnigold™ Metalization System
E F G H K
I
J
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θ JC 250 mA 37 V 10 W @ TC ≤ 100 OC -65 OC to +200 OC -65 C to +150 C 10 OC/W
O O
DIM A B C D E F G H I J K
MINIMUM
inches / mm
MAXIMUM
inches / mm
.095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07
.105 / 2.67
.255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24
.003 / 0.08 .052 / 1.32 .120 / 3.05
.007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33
ORDER CODE: ASI10552
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICES hFE PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCE = 35 V
TC = 25 C
O
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
45 45 3.5 1.0
UNITS
V V V mA --dB %
VCE = 5.0 V VCC = 35 V
IC = 100 mA POUT = 2 W f = 1025 - 1150 MHz
30 9.0 35
300
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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