AVD090F

AVD090F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG (B) A .100 X 45° DESCRIPTION: The ASI AVD090F is Designed for C B ØD .088 x 45° CHAMFER FEATURES: Omnigold™ Metalization System DIM E F G H J K I MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCB PDISS TJ TSTG θ JC 6.5 A PEAK 55 V 250 W PEAK A B C D E F G H I J K .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 -65 OC to +200 OC -65 OC to +150 OC 0.6 OC/W ORDER CODE: ASI10562 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 10 mA IC = 10 mA IE = 1 mA VCB = 50 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 6.25 UNITS V V V mA --dB % VCE = 5.0 V VCC = 50 V IC = 500 mA POUT = 90 W f = 1025 - 1150 MHz 15 8.5 35 120 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...