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AVD150

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

AVD150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG A DESCRIPTION: The ASI AVD10 is Designed for C .025...


Advanced Semiconductor

AVD150

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Description
AVD150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG A DESCRIPTION: The ASI AVD10 is Designed for C .025 x 45° 2X B ØD E F 4x .062 x 45° G FEATURES: Input Matching Network Omnigold™ Metalization System H I J K P M N L DIM A B MINIMUM inches / mm MAXIMUM inches / mm .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .450 / 11.43 .125 / 3.18 .640 / 16.26 .890 / 22.61 .395 / 10.03 .004 / 0.10 .052 / 1.32 .118 / 3.00 .030 / 0.76 .396 / 10.06 .130 / 3.30 .407 / 10.34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 11 A 55 V 400 W @ TC = 25 C -65 OC to +250 OC -65 OC to +200 OC 0.3 OC/W O C D E F G H I J K L M N P .660 / 16.76 .910 / 23.11 .415 / 10.54 .007 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 ORDER CODE: ASI10564 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE Cob PG ηC IC = 10 mA IC = 15 mA IE = 1 mA VCE = 50 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 12.5 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 28 V VCC = 50 V IC = 1.0 A f = 1.0 MHz POUT = 150 W f = 1025 - 1150 MHz 15 120 80 7.7 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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