M28F010

M28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption 30 mA Maximum Active Current 100 mA Maximum Standby Current Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y Y Y Y ETOX-III Flash-Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10 000 Program Erase Cycles Minimum Available in Three Product Grades QML b 55 C to a 125 C (TC) SE2 b 40 C to a 125 C (TC) SE3 b 40 C to a 110 C (TC) Y Intel’s M28F010 is a 1024-Kbit byte-wide in-system re-writable CMOS nonvolatile flash memory It is organized as 131 072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package The M28F010 is also available in 32-contact leadless chip carrier J-lead and Flatpack surface mount packages It offers the most cost-effective and reliable alternative for updatable nonvolatile memory The M28F010 adds electrical chiperasure and reprogramming to EPROM technology Memory contents of the M28F010 can be erased and reprogrammed 1) in a socket 2) in a PROM programmer socket 3) on-board during subassembly test 4) insystem during final test and 5) in-system after-sal...