512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
M28F512
512K (64K x 8, Chip Erase) FLASH MEMORY
FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION
– Standby Current: 100µA ...
Description
M28F512
512K (64K x 8, Chip Erase) FLASH MEMORY
FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION
– Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE
TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM)
ELECTRICAL CHIP ERASE in 1s RANGE
INTEGRATED ERASE/PROGRAM-STOP TIMER EXTENDED TEMPERATURE RANGES
32
1
PDIP32 (B)
PLCC32 (C)
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.
Figure 1. Logic Diagram
VCC VPP
16 A0-A15
8 DQ0-DQ7
Table 1. Signal Names
A0 - A15
Address Inputs
DQ0 - DQ7
Data In...
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