512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W512
512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TI...
Description
M27W512
512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM
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2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V
28 28
s
s s
PIN COMPATIBLE with M27C512 LOW POWER CONSUMPTION: – 15µA max Standby Current – 15mA max Active Current at 5MHz
1 1
FDIP28W (F)
PDIP28 (B)
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PROGRAMMING TIME 100µs/byte HIGH RELIABILITY CMOS TECHNOLOGY – 2,000V ESD Protection – 200mA Latchup Protection Immunity
PLCC32 (K)
s
ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 3Dh Figure 1. Logic Diagram
TSOP28 (N) 8 x 13.4 mm
DESCRIPTION The M27W512 is a low voltage 512 Kbit EPROM offered in the two range UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems and is organized as 65,536 by 8 bits. The M27W512 operates in the read mode with a supply voltage as low as 2.7V at –40 to 85°C temperature range. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. The FDIP28W (window ceramic frit-seal package) has transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27W512 is offered in PDIP28, PLCC32 and TSOP28 (8 x 13.4 mm) packages.
VCC
16 A0-A15
8 Q0-Q...
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