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M27W801

STMicroelectronics

8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM

M27W801 8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME:...


STMicroelectronics

M27W801

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Description
M27W801 8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 32 s 32 s s PIN COMPATIBLE with M27C801 LOW POWER CONSUMPTION: – 15µA max Standby Current – 15mA max Active Current at 5MHz 1 1 FDIP32W (F) PDIP32 (B) s s PROGRAMMING TIME 50µs/byte HIGH RELIABILITY CMOS TECHNOLOGY – 2,000V ESD Protection – 200mA Latchup Protection Immunity PLCC32 (K) TSOP32 (N) 8 x 20 mm s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 42h Figure 1. Logic Diagram DESCRIPTION The M27W801 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is organized as 1,048,576 by 8 bits. The M27W801 operates in the read mode with a supply voltage as low as 2.7V at –40 to 85°C temperature range. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. The FDIP32W (window ceramic frit-seal package) has a transparent lids which allow the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27W801 is offered in PDIP32, PLCC32 and TSOP32 (8 x 2...




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