NMOS 16K 2K x 8 UV EPROM
M2716
NMOS 16K (2K x 8) UV EPROM
2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2...
Description
M2716
NMOS 16K (2K x 8) UV EPROM
2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM MODES THREE-STATE OUTPUT with TIED-ORCAPABILITY EXTENDED TEMPERATURE RANGE PROGRAMMING VOLTAGE: 25V DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.
24
1
FDIP24W (F)
Figure 1. Logic Diagram
VCC
VPP
11 A0-A10
8 Q0-Q7
EP G
M2716
Table 1. Signal Names
A0 - A10 Q0 - Q7 EP G VPP VCC VSS Address Inputs Data Outputs Chip Enable / Program Output Enable Program Supply Supply Voltage Ground
VSS
AI00784B
July 1994
1/9
M2716
Table 2. Absolute Maximum Ratings
Symbol TA TBIAS TSTG VCC VIO VPP PD Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Supply Voltage Input or Output Voltages Program Supply Power Dissipation grade 1 grade 6 grade 1 grade 6 Value 0 to 70 –40 to 85 –10 to 80 –50 to 95 –65 to 125 –0.3 to 6 –0.3 to 6 –0.3 to 26.5 1.5 Unit °C °C °C V V V W
Not...
Similar Datasheet