NMOS 512K 64K x 8 UV EPROM
M27512
NMOS 512K (64K x 8) UV EPROM
FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STAN...
Description
M27512
NMOS 512K (64K x 8) UV EPROM
FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
28
1
FDIP28W (F)
DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.
Figure 1. Logic Diagram
VCC
16 A0-A15
8 Q0-Q7
E
M27512
Table 1. Signal Names
A0 - A15 Q0 - Q7 E GVPP VCC VSS Address Inputs Data Outputs Chip Enable
GVPP
VSS
Output Enable / Program Supply Supply Voltage Ground
AI00765B
March 1995
1/11
M27512
Table 2. Absolute Maximum Ratings
Symbol TA TBIAS TSTG VIO VCC VA9 VPP Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Input or Output Voltages Supply Voltage A9 Voltage Program Supply Grade 1 Grade 6 Grade 1 Grade 6 Value 0 to 70 –40 to 85 –10 to 80 –50 to 95 –65 to 125 –0.6 to 6.5 –0.6 to 6.5 –0.6 to 13.5 –0.6 to 14 Unit °C °C °C V V V V
Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stre...
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