Silicon Diode
SANKEN ELECTRIC CO., LTD.
FMG-26S/R
1 Scope The present specifications shall apply to an FMG-26S/R.
2 Outline
Type
...
Description
SANKEN ELECTRIC CO., LTD.
FMG-26S/R
1 Scope The present specifications shall apply to an FMG-26S/R.
2 Outline
Type
Silicon Diode
Structure
Resin Molded
Applications
High Frequency Rectification
3 Flammability UL94V-0(Equivalent)
4 Absolute maximum ratings
No.
Item
Symbol Unit
Rating
DesignsConditions
w 1 Transient Peak Reverse Voltage VRSM V
Ne 2 Peak Reverse Voltage
VRM
V
r 3 Average Forward Current
IF(AV)
A
fo 4 Peak Surge Forward Current ed 5 I2t Limiting Value
IFSM
A
I2t
A2s
600
600
6.0
Refer to derating curve in Section 7
50
10 ms. Half sine wave, one shot
12.5
1 ms ≤ t ≤ 10 ms
nd 6 Junction Temperature
Tj
°C
-40 to +150
me 7 Storage Temperature
Tstg
°C
m No.1, 2, 4 and 5 show ratings per one chip.
-40 to +150
co 5 Electrical characteristics (Ta=25°C, unless otherwise specified)
e No.
Item
Symbol Unit
Value
Conditions
t R 1 Forward Voltage Drop
VF
V
2.2 max.
IF=3.0A
No 2 Reverse Leakage Current
IR
µA
500 max.
VR=VRM
3
Reverse Leakage Current Under High Temperature
H・IR
mA
4 Reverse Recovery Time
trr1
ns
trr2
ns
5 Thermal Resistance
Rth(j-c) °C /W
No.1, 2 and 3 show characteristics per one chip.
3.0 max. 100 max. 50 max. 4.0 max.
VR=VRM, Tj=150°C
IF=IRP=100mA 90% Recovery point, Tj=25°C IF=100mA,IRP=200mA 75% Recovery point ,Tj=25°C
Between Junction and case
040928
1/4
61426-01
SANKEN ELECTRIC CO., LTD. 6 Characteristics
FMG-26S/R
Forward Power Dissipation, PF (W)
20 Tj=150°C
18
IF(AV) - PF
...
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