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FMG-26R

Sanken electric

Silicon Diode

SANKEN ELECTRIC CO., LTD. FMG-26S/R 1 Scope The present specifications shall apply to an FMG-26S/R. 2 Outline Type ...


Sanken electric

FMG-26R

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SANKEN ELECTRIC CO., LTD. FMG-26S/R 1 Scope The present specifications shall apply to an FMG-26S/R. 2 Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3 Flammability UL94V-0(Equivalent) 4 Absolute maximum ratings No. Item Symbol Unit Rating DesignsConditions w 1 Transient Peak Reverse Voltage VRSM V Ne 2 Peak Reverse Voltage VRM V r 3 Average Forward Current IF(AV) A fo 4 Peak Surge Forward Current ed 5 I2t Limiting Value IFSM A I2t A2s 600 600 6.0 Refer to derating curve in Section 7 50 10 ms. Half sine wave, one shot 12.5 1 ms ≤ t ≤ 10 ms nd 6 Junction Temperature Tj °C -40 to +150 me 7 Storage Temperature Tstg °C m No.1, 2, 4 and 5 show ratings per one chip. -40 to +150 co 5 Electrical characteristics (Ta=25°C, unless otherwise specified) e No. Item Symbol Unit Value Conditions t R 1 Forward Voltage Drop VF V 2.2 max. IF=3.0A No 2 Reverse Leakage Current IR µA 500 max. VR=VRM 3 Reverse Leakage Current Under High Temperature H・IR mA 4 Reverse Recovery Time trr1 ns trr2 ns 5 Thermal Resistance Rth(j-c) °C /W No.1, 2 and 3 show characteristics per one chip. 3.0 max. 100 max. 50 max. 4.0 max. VR=VRM, Tj=150°C IF=IRP=100mA 90% Recovery point, Tj=25°C IF=100mA,IRP=200mA 75% Recovery point ,Tj=25°C Between Junction and case 040928 1/4 61426-01 SANKEN ELECTRIC CO., LTD. 6 Characteristics FMG-26S/R Forward Power Dissipation, PF (W) 20 Tj=150°C 18 IF(AV) - PF ...




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