FMMD914

SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE ISSUE 2 - OCTOBER 1995 FMMD914 2 DIODE PIN CONNECTION  PARTMARKING DETAIL – 5D 1 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Working Peak Reverse Voltage Average Rectified Forward Current at Tamb=25°C Repetitive Peak Forward Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VRWM IF(AV) IFRM Ptot Tj:Tstg VALUE 75 75 225 330 -55 to +150 UNIT V mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. 75 1 25 50 8 4 Total Capacitance Forward Recovery Voltage Rectification Efficiency CT VFM(REC) ηr MAX. UNIT CONDITIONS. V V µA Reverse Breakdown Voltage VBR Forward Voltage Static Reverse Current Reverse Recovery Time VF IR trr IR=100µ A IF=10mA VR=20V VR=20V, Tamb=150 °C IF= IRM=10mA,IRR =1mA RL=100Ω IF=10mA,IRR =1mA, VR=6V RL=100Ω VR=0, f=1MHz IF=50mA, RL=50Ω VR=2V,RL=5kΩ , CL=20pF Zsource=50Ω , f=100MHz nA ns ns pF V % 4 2.5 45 Spice parameter data is available upon request for this device PAGE NUMBER ...