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SWITCHING TRANSISTORS. FMMT2222A-1P Datasheet |
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SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
FMMT2222
FMMT2222A
ISSUE 3 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222 1BZ
FMMT2222A 1P
FMMT2222R 2P
FMMT2222AR 3P
COMPLEMENTARY TYPES
FMMT2222 FMMT2907
FMMT2222A FMMT2907A
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL FMMT2222 FMMT2222A UNIT
Collector-Base Voltage
VCBO
60
75 V
Collector-Emitter Voltage
VCEO
30
40 V
Emitter-Base Voltage
VEBO
5
6V
Continuous Collector Current
IC
600 mA
Power Dissipation at Tamb=25°C
Ptot
330 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 60
Breakdown Voltage
75
V IC=10µA, IE=0
Collector-Emitter V(BR)CEO 30 40 V IC=10mA, IB=0
Breakdown Voltage
Emitter-Base
V(BR)EBO
Breakdown Voltage
5
6
V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
Emitter Cut-Off
Current
IEBO
10 nA VCB=50V, IE=0
10 µA VCB=60V, IE=0
10 nA VCB=50V, IE=0, Tamb=150°C
10 µA VCB=60V, IE=0, Tamb=150°C
10 10 nA VEB=3V, IC=0
Collector-Emitter
Cut-Off Current
ICEX
10 10 nA VCE=60V, VEB(off)=3V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
VCE(sat)
VBE(sat)
hFE
0.3 0.3 V
1.0 1.0 V
0.6 2.0 0.6 1.2 V
2.6 2.0 V
35 35
50 50
75 75
35 35
100 300 100 300
50 50
30 40
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
IICC==01.m1mA,AV, CVEC=E1=01V0V*
IC=10mA, VCE=10V*
IC=10mA, VCE=10V, Tamb=-55°C
IC=150mA, VCE=10V*
IC=150mA, VCE=1V*
IC=500mA, VCE=10V*
*SMpieceaspuarreadmuentdererdpatualsiesdavcaoinladbitlieonusp.oPnurlesequweisdtthfo=r3t0h0isµsd.eDvuictey cycle ≤ 2%
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FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Transition
Frequency
fT 250 300 MHz IC=20mA, VCE=20V
f=100MHz
Output Capacitance Cobo
8 8 pF VCB=10V, IE=0,
f=140KHz
Input Capacitance
Cibo
30 25 pF VEB=0.5V, IC=0
f=140KHz
Delay Time
Rise Time
td
tr
10 10 ns VCC=30V, VBE(off=) 0.5V
25 25 ns IC=150mA, IB1=15mA
(See Delay Test Circuit)
Storage Time
Fall Time
ts
tf
225
60
225 ns
60 ns
IVBC1=C=I3B02=V1,5ImC=A150mA
(See Storage Test
Circuit)
DELAY AND RISE TEST CIRCUIT
Generator rise time <2ns
Pulse width (t1)<200ns
Duty cycle = 2%
+30V
200Ω
9.9V
0
0.5V
619Ω
Scope:
Rin > 100 kΩ
Cin < 12 pF
Rise Time < 5 ns
STORAGE TIME AND FALL TIME TEST CIRCUIT
+16.2 V
=100µs
<5ns
+30V
Ω
0 1KΩ
-13.8 V
=500µs
Duty cycle = 2%
1N916
-3V
Scope:
Rin > 100 kΩ
Cin < 12 pF
Rise Time < 5 ns
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