FMMT2222R-2P

SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS ISSUE 3 – FEBRUARY 1996 FEATURES * Fast switching PARTMARKING DETAILS FMMT2222 – 1BZ FMMT2222A – 1P FMMT2222R – 2P FMMT2222AR – 3P COMPLEMENTARY TYPES FMMT2222 – FMMT2907 FMMT2222A – FMMT2907A FMMT2222 FMMT2222A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C SYMBOL VCBO VCEO VEBO IC Ptot FMMT2222 60 30 5 600 330 -55 to +150 FMMT2222A 75 40 6 UNIT V V V mA mW °C Operating and Storage Temperature Range Tj:Tstg PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio FMMT2222 FMMT2222A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 60 75 V IC=10µA, IE=0 30 5 10 10 IEBO ICEX VCE(sat) VBE(sat) hFE 0.6 35 50 75 35 100 50 30 10 10 0.3 1.0 2.0 2.6 40 6 10 10 10 10 0.3 1.0 1.2 2.0 V V µA IC=10mA, IB=0 IE=10µA, IC=0 VCB=50V, IE=0 VCB=60V, IE=0 VCB=50V, IE=0, Tamb=150°C VCB=60V, IE=0, Tamb=150°C VEB=3V, IC=0 VCE=60V, VEB(off)=3V IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb...