FMMT455

SOT23 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW PARTMARKING DETAIL – 455 FMMT455 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 160 140 5 2 1 200 500 -55 to +150 SOT23 UNIT V V V A A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo 100 10 Typ 100 15 MIN. MAX. 160 140 5 0.1 0.1 0.7 300 MHz pF UNIT V V V µA µA CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=140V VEB=4V IC=150mA, IB=15mA IC=150mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz V * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 110 FMMT455 TYPICAL CHARACTERISTICS tf ns 900 tr tf 800 ts 6 ts µS 7 0.4 ns 500 IB1=IB2=IC/10 VCE=10V 5 - (Volts) IC/IB=10 0.2 Switching time 0.3 400 700 tr 300 600 4 td 3 nS 100 2 200 5...