FMMT5179

SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB PARTMARKING DETAIL - 179 FMMT5179 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Static Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector-Base Capacitance Small Signal Current Gain Noise Figure Common-Emitter Amplifier Power Gain SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) fT Ccb hfe NF Gpe 15 25 3 900 25 MIN. 12 20 2.5 0.02 1.0 250 0.4 1.0 2000 1 300 14 4.5 ps dB dB V V MHz pF SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg MAX. VALUE 20 12 2.5 50 330 -55 to +150 SOT23 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). UNIT CONDITIONS. V V V µA µA IC= 3mA, IB=0 IC= 1µA, IE=0 IE=10µA, IC=0 VCB=15V, IE=0 VCB=15V, IE=0, Tamb=150°C IC=3mA, VCE=1V IC=10mA, IB=1mA IC=10mA, IB=1mA IC=5mA, VCE=6V, f=100MHz IE=0, VCB=10V, f=1MHz IC=2mA, VCE=6V, f=1KHz IE=2mA, VCB=6V, f=31.9MHz IC=1.5mA, VCE=6V RS=50Ω, f=200MHz IC=5mA, VCE=6V f=200MHz Collector Base Time Constant rb’Cc Spice parameter data is available upon request for this dev...