FMMT549A

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - OCTOBER 1995 7 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp continuous current COMPLEMENTARY TYPES – FMMT549 - FMMT449 FMMT549A - N/A PARTMARKING DETAIL – FMMT549 - 549 FMMT549A - 59A FMMT549 FMMT549A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation: at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents ICBO IEBO Saturation Voltages FMMT549A SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg TYP. MAX. VALUE -35 -30 -5 -2 -1 -200 500 -55 to +150 UNIT V V V UNIT V V V A A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). MIN. -35 -30 -5 -0.1 -10 -0.1 -0.25 -0.50 -0.9 -0.85 70 80 40 100 150 fT Cobo ton 50 100 25 200 130 80 160 200 300 500 MHz pF ns -0.50 -0.75 -0.30 VBE(sat) Base Emitter Turn-on Voltage VBE(on) Static Forward Current Transfer Ratio FMMT549 FMMT549A CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-30V VCB=-30V, Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-100mA, IB=-1mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-500mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA µA µA µA VCE(sat) V V V V V -1.25 -1 hFE ...