FMMT558

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 FMMT558 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage Switching times SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. VALUE -400 -400 -5 -500 -150 -200 500 -55 to +150 UNIT V V V -100 -100 -0.2 -0.5 -0.9 -0.9 100 100 15 50 5 95 1600 300 MHz pF ns ns nA nA V V V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-320V; V+-=320V VEB=-4V IC=-20mA, IB=-2mA * IC=-50mA, IB=-6mA * IC=-50mA, IB=-5mA * IC=-50mA, VCE=-10V * IC=-1mA, VCE =-10V IC=-50mA, VCE =-10V * IC=-100mA, VCE =-10V* IC=-10mA, VCE =-20V f=20MHz VCB =-20V, f=1MHz IC=-50mA, VCE =-100V IB1=5mA, IB2=-10mA UNIT V V V mA mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO VBR(CEO) V(BR)EBO ICBO ; ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff -400 -400 -5 * ...