FMMT589

SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 5 - JANUARY 1997 7 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE 589 FMMT489 FMMT589 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. VALUE -50 -30 -5 -2 -1 -200 500 -55 to +150 UNIT V V V -100 -100 -100 -0.25 -0.35 -0.65 -1.2 -1.1 100 100 80 40 100 15 300 MHz pF nA nA nA V V V V V CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-30V VCES=-30V VEB=-4V IC=-0.5A, IB=-50mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-1mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz UNIT V V V A A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO -50 -30 -5 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector -Emitter Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Emitter-Base Breakdown Voltage V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo *Measured unde...