FMMT614

SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 3 – APRIL 1996 FEATURES * hFE up to 5k at Ic= 500mA * Fast switching * Low VCE(sat) at High Ic PARTMARKING DETAILS – 614 FMMT614 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO MIN. 120 100 10 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. 300 130 14 0.02 10 10 100 0.9 0.78 1.7 1.5 15K 5K 6 0.7 2.5 pF µs µs VALUE 120 100 10 2 500 500 -55 to +150 UNIT V V V A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). MAX. UNIT V V V nA µA CONDITIONS. IC=10µA, IE=0 IC=10mA, IB=0* IE=10µA, IC=0 VCB=100V, IE=0 VCES=100V, IE=0 VEB=8V, IC=0 IC=500mA, IB=5mA* IC=100mA, IB=0.1mA IC=500mA, IB=5mA* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* VCB=10V, f=100mHz IC=100µA, IB=0.1mA VS=10V Collector Cut-Off Current ICBO Collector Cut-Off Current ICES Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Output Capacitance Switching Times IEBO VCE(sat) VBE(sat) VBE(on) hFE Cobo ton toff nA V V V V 1.0 0.9 1.9 1.8 *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spi...