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FMMT620TC Dataheets PDF



Part Number FMMT620TC
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
Datasheet FMMT620TC DatasheetFMMT620TC Datasheet (PDF)

FMMT620 SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses. FEATURES • • • • • • • • • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 3.0A IC=1.5A Continuous Collec.

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FMMT620 SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses. FEATURES • • • • • • • • • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 3.0A IC=1.5A Continuous Collector Current SOT23 package SOT23 APPLICATIONS DC - DC Modules Power Management Functions CCFL Backlighting Inverters Motor control and drive functions E C B TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units Top View ORDERING INFORMATION DEVICE FMMT620TA FMMT620TC REEL SIZE (inches) 7 13 DEVICE MARKING 620 ISSUE 1 - JANUARY 2001 1 FMMT620 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 80 80 5 5 1.5 500 625 5 806 6.4 -55 to +150 UNIT V V V A A mA mW mW/°C mW mW/°C °C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 200 155 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tр5 secs. ISSUE 1 - JANUARY 2001 2 FMMT620 TYPICAL CHARACTERISTICS ISSUE 1 - JANUARY 2001 3 FMMT620 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 15 45 145 160 0.86 0.82 200 300 110 60 20 100 450 450 170 90 30 10 160 11.5 86 1128 18 MIN. 100 80 7 TYP. 180 110 8 100 100 100 20 60 185 200 1.0 0.95 900 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. I C =100 ␮ A I C =10mA* I E =100 ␮ A V CB =80V V EB =5.5V V CES =80V I C =0.1A, I B =10mA* I C =0.5A, I B =50mA* I C =1A, I B =20mA* I C =1.5A, I B =50mA* I C =1.5A, I B =50mA* I C =1.5A, V CE =2V* I C =10mA, V CE =2V* I C =200mA, V CE =2V* I C =1A, V CE =2V* I C =1.5A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* MHz pF ns ns I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz V CC =10V, I C =500mA I B1 =I B2 =25mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT C obo t (on) t (off) *Measured under pulsed c.


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