FMMT634

“SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A (5K minimum) - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734 PARTMARKING DETAIL – 634 FMMT634 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 120 100 12 5 900 625 -55 to +150 UNIT V V V A mA mW °C * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%. FMMT634 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 0.67 0.72 0.75 0.82 0.68 0.85 1.5 MIN. 120 TYP. 170 MAX. UNIT V CONDITIONS. I C=100 µ A I C=10mA* I E=100 µ A V CB=80V V EB=7V V CES=80V I C=100mA, I B=1mA I C=250mA, I B=1mA I C=500mA, I B=5mA I C=900mA, I B=5mA I C=900mA, I B=5mA I C=1A, I B=5mA * I C=1A, I B=5mA * I C =1A, V CE=5V* I C=10mA, V CE=5V...