FMMT723

SuperSOT SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS ISSUE 3 JUNE 1996 FEATURES FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 * * * * * * 625mW POWER DISSIPATION C B E IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ. Exhibits extremely low equivalent on-resistance; RCE(sat) DEVICE TYPE FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 COMPLEMENT FMMT617 FMMT618 FMMT619 – FMMT624 PARTMARKING 717 718 720 722 723 RCE(sat) 72mΩ at 2.5A 97mΩ at 1.5A 163mΩ at 1.5A - ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C* Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg FMMT 717 -12 -12 -5 -10 -2.5 FMMT 718 -20 -20 -5 -6 -1.5 FMMT 720 -40 -40 -5 -4 -1.5 -500 625 -55 to +150 FMMT 722 -70 -70 -5 -3 -1.5 FMMT 723 -100 -100 -5 -2.5 -1 UNIT V V V A A mA mW °C *Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices 3 - 159 FMMT722 FMMT723 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL FMMT722 MIN. -70 -70 TYP. -150 -125 -100 -100 -5 -100 -100 -100 -35 -135 -140 -175 -50 -200 -220 -26...