FMMT918

SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 2 – JANUARY 1996 PARTMARKING DETAILS – 3B FMMT918 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Input Capacitance Noise Figure Common Emitter Power Gain SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO MIN. 30 15 3 0.05 0.4 1.0 20 600 3.0 1.7 1.6 6.0 15 MHz pF pF pF dB dB SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. VALUE 30 15 3 100 330 -55 to +150 UNIT V V V µA SOT23 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). CONDITIONS. IC=1µA, IE=0 IC=3mA, IB=0* IE=10µA, IC=0 VCB=15V, IE=0 IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, VCE=1V IC=4mA, VCE=10V f=100MHz VCB=0V, f=1MHz VCB=10V, f=1MHz VEB=0.5V,f=1MHz VCE=6V, IC=1mA f=60MHz, RG=400Ω VCB=12V, IC=6mA f=200MHz Collector Cut-Off Current ICBO VCE(sat) VBE(sat) hFE fT Cobo Cibo N Gpe V V *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 168 ...