FMMTH10

SOT23 NPN SILICON PLANAR RF TRANSISTOR ISSUE 2 – NOVEMBER 1995 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz FMMTH10 E C B PARTMARKING DETAIL – 3EZ SOT23 SYMBOL VCES VCEO VEBO IC ICM Ptot Tj:Tstg MAX. UNIT V V V 100 100 0.5 Typ. 0.45 0.65 0.95 60 650 0.7 9 Typ. 3 5 MHz pF ps dB nA nA V pF V VALUE 30 25 3 25 50 330 -55 to +150 CONDITIONS. IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V,IC=0 IC=4mA, IB=0.4mA VCB=10V, IE=0 f=1MHz IC=4mA, VCE=10V IC=4mA, VCE=10V* IC=4mA, VCE=10V, f=100MHz VCB=10V, IE=0, f=1MHz IC=4mA, VCB=10V, f=31.8MHz IC=2mA, VCE=5V f=500MHz, UNIT V V V mA mA mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO MIN. 30 25 3 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) Collector-Emitter Saturation VCE(sat) Voltage Common Base Feedback Capacitance Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Crb VBE(on) hFE fT Collector Base Capacitance Ccb Collector Base Time Constant rbCc Noise Figure Nf *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is avai...