FP1510SOT89

Preliminary Data Sheet FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTION AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FP1510 also features Si3N4 passivation and is available in die form or in other packages. Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Saturated Drain-Source Current LP1510SOT89-1 LP1510SOT89-2 LP1510SOT89-3 Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Output Third-Order Intercept Point Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude frequency=1.8 GHz P-1dB G-1dB PAE NF IP3 IMAX GM IGSO VP |VBDGS| |VBDGD| VDS = 5 V; IDS = 5...