FPNH10
FPNH10
C
BE
TO-92
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers, with co...
FPNH10
FPNH10
C
BE
TO-92
NPN RF
Transistor
This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25 30 3.0 50 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
FPNH10 350 2.8 125 357
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2000 Fairchild Semiconductor Corporation
FPNH10 Rev. A
FPNH10
NPN RF
Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)...