FPT120A

High-Sensitivity Silicon Phototransistors Optoelectronic Products 4-47 FPT120/A/B/C FPT130/A/B General Description The FPT120/A/B/C and FPT130/AlB are silicon nitride protected npn Planar phototransistors with exceptionally stable characteristics and high illumination-sensitivity. The case is made of a special plastic compound with transparent resin encapsulation. The controlled sensitivities offered in the A, Band C versions give the circuit designer increased flexibility. High illumination Sensitivity Availability Of Base Pins For Flexible Circuit Design Absolute Maximum Ratings Maximum Temperature and Humidity Storage Temperature -55°C to +100°C Operating Temperature -55°C to +85°C Pin Temperature (Soldering, 5 s) 260°C Relative Humidity at 65°C 85% Maximum Power Dissipation (Note 1) Total Dissipation at Tc = 25°C 200 mW = Derate Linearly from 25°C 3.33 mW1°C Total Dissipation at TA 25°C 100 mW Derate Linearly from 25°C 1.67 mW/oC Maximum Voltage and Currents VCE(sus) Collector-to-Emitter Sustaining Voltage (Note 4) Ic Collector Current 20 V 25 mA Package Outlines FPT120/A/B/C PHYSICAL DIMENSIONS 5~~h LENS h - - - l .210 (5.334) .,051;. -+.,40(3,556) REF 3 PINS ~ ~ ~ .400~~.'60) .022 (.559)~ ~ ~-----.L .016(.406) OIA .100 (2.540) BASE EMITTER COLLECTOR \y 45· L Y\ / . "'- .060 (2.032) FLAT FPT130/A/B 1 .200 . (5.080)1.,26 (3.200) DlA .100 (2.540) Ert(=t ~ 3 PINS .022(.559) ~ ~ ~ .400(10.160) MIN .016 (.406) OIA \ 450 N...