FQA13N80 800V N-Channel MOSFET
FQA13N80
800V N-Channel MOSFET
Features
• 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low...
FQA13N80 800V N-Channel MOSFET
FQA13N80
800V N-Channel MOSFET
Features
12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 68 nC) Low Crss ( typical 30pF) Fast switching 100% avalanche tested Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D
G DS
TO-3P
FQA Series
G S
Absolute Maximum Ratings
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
FQA13N80
800 12.6 8.0 50.4 ± 30 1100 12.6 30 4.0 300 2.38 -55 to +150
300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Para...