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FQA22P10 Dataheets PDF



Part Number FQA22P10
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 100V P-Channel MOSFET
Datasheet FQA22P10 DatasheetFQA22P10 Datasheet (PDF)

FQA22P10 QFET FQA22P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficie.

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FQA22P10 QFET FQA22P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features • • • • • • • -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series TC = 25°C unless otherwise noted S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA22P10 -100 -24 -17 -96 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 710 -24 15 -6.0 150 1.0 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 1.0 -40 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. C2, August 2002 FQA22P10 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -100 V, VGS = 0 V VDS = -80 V, TC = 125°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -100 -------0.1 -------1 -10 -100 100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -12 A VDS = -40 V, ID = -12 A (Note 4) -2.0 --- -0.096 14 -4.0 0.125 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---1170 460 160 1500 600 200 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -80 V, ID = -22 A, VGS = -10 V (Note 4, 5) VDD = -50 V, ID = -22 A, RG = 25 Ω (Note 4, 5) -------- 17 170 60 110 40 7.0 21 45 350 130 230 50 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -24 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -22 A, dIF / dt = 100 A/µs (Note 4) ------ ---110 0.6 -24 -96 -4.0 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.85mH, IAS = -24A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation Rev. C2, August 2002 FQA22P10 Typical Characteristics -ID , Drain Current [A] -ID, Drain Current [A] 10 1 VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V Top : 10 1 175℃ 10 0 25℃ -55℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test 10 0 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 10 -1 10 0 10 1 10 -1 2 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.5 VGS = - 10V 0.3 VGS = - 20V 0.2 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 0.4 10 1 10 0 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0.1 ※ Note : TJ = 25℃ 0.0 0 10 20 30 40 50 60 70 80 90 100 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3500 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = .


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