FQB2P40

FQB2P40 / FQI2P40 December 2000 QFET FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology. TM Features -2.0A, -400V, RDS(on) = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB2P40 / FQI2P40 -400 -2.0 -1.27 -8.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 120 -2.0 6.3 -4.5 3.13 63 0.51 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperatu...