FQB3N60 / FQI3N60
April 2000
QFET
FQB3N60 / FQI3N60
600V N-Channel MOSFET
General Description
These N-Channel enhancem...
FQB3N60 / FQI3N60
April 2000
QFET
FQB3N60 / FQI3N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
TM
Features
3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
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G
S
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D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB3N60 / FQI3N60 600 3.0 1.9 12 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
200 3.0 7.5 4.5 3.13 75 0.6 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from ca...