FQB95N03L

FQB95N03L December 2002 FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.0064Ω (Typ), V GS = 10V rDS(ON) = 0.010Ω (Typ), VGS = 5V Qg (Typ) = 24nC, VGS = 5V Qgd (Typ) = 8nC CISS (Typ) = 2600pF Applications DC/DC converters DRAIN (FLANGE) D GATE SOURCE G TO-263AB MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, Rθ JA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 75 48 15 S Ratings 30 ±16 Units V V A A A A W W/oC oC Figure 4 80 0.65 -55 to 150 Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.5 62 43 o o C/W C/W oC/W Package Marking and Ordering Information Device Marking FQB95N03L Device FQB95N03L Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units ©2002 Fairchild Semiconductor Corporation F...