FQD45N03L

FQD45N03L March 2004 FQD45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.018Ω (Typ), VGS = 10V rDS(ON) = 0.028Ω (Typ), VGS = 5V Qg (Typ) = 9nC, VGS = 5V Qgd (Typ) =3nC CISS (Typ) =970pF Applications DC/DC converters D DRAIN (FLANGE) GATE SOURCE G TO-252 MOSFET Maximum Ratings TC=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, Rθ JA=52oC) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 20 20 8 Figure 4 41 0.33 -55 to 150 Ratings 30 ±20 S Units V V A A A A W W/oC o C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 3 100 52 o C/W C/W oC/W o Package Marking and Ordering Information Device Marking FQD45N03L Device FQD45N03L Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units ©2004 Fairchild Semiconductor Corporation FQD45N03L Rev. B1 FQD45N03L E...