FQG4902

FQG4902 QFET FQG4902 250V Dual N & P-Channel MOSFET General Description These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on half bridge. TM Features N-Channel 0.54A, 250V, RDS(on) = 2.0 Ω @ VGS = 10 V P-Channel -0.54A, -250V, RDS(on) = 2.0 Ω @ VGS = -10 V Low gate charge ( typical N-Channel 6.0 nC) ( typical P-Channel 12.0 nC) Fast switching Improved dv/dt capability D2 D2 D1 D1 G2 S2 G1 S1 Pin #1 5 4 6 3 7 2 8-DIP 8 1 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG TA = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TA = 25°C) Drain Current - Continuous (TA = 100°C) Drain Curent - Pulsed (Note 1) N-Channel 250 0.54 0.34 4.32 ± 30 (Note 2) P-Channel -250 -0.54 -0.34 -4.32 -5.5 Units V A A A V V/ns W W/°C °C Gate-Source Voltage Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - Derate above 25°C Operating and Storage Temperature Range 5.5 1.4 0.011 -55 to +150 Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient (Note 5a) Typ -- Max 90 Units °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, April...