FQI13N50

FQB13N50 / FQI13N50 March 2001 QFET FQB13N50 / FQI13N50 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on half bridge. D TM Features 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V Low gate charge ( typical 45 nC). Low Crss ( typical 25 pF). Fast switching. 100% avalanche tested. Improved dv/dt capability. D ! ● ◀ ▲ ● ● G S G! D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB13N50 / FQI13N50 500 12.5 7.9 50 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 810 12.5 17 4.5 3.13 170 1.35 -55 to +150 300 TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Stora...