Document
FQP13N10L — N-Channel QFET® MOSFET
FQP13N10L
N-Channel QFET® MOSFET
100 V, 12.8 A, 180 mΩ
December 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 6.4 A
• Low Gate Charge (Typ. 8.7 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8" from case for 5 seconds.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
S
FQP13N10L 100 12.8 9.05 51.2 20 95 12.8 6.5 6.0 65 0.43
-55 to +175
300
Thermal Characteristics
+θ +θ
Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
FQP13N10L 2.31 -' &
Unit V A A A V mJ A mJ
V/ns W
W/°C °C °C
6? 6?
©2000 Fairchild Semiconductor Corporation
1
FQP13N10L Rev. C1
www.fairchildsemi.com
FQP13N10L — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQP13N10L
Top Mark FQP13N10L
Package TO-220
Packing Method Reel Size
Tube
N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature / ∆TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Switching Characteristics
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 A VGS = 10 V, ID = 6.4 A VGS = 5 V, ID = 6.4 A VDS = 30 V, ID = 6.4 A
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
td(on) tr td(off) tf Qg Qgs Qgd
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 50 V, ID = 12.8 A, RG = 25
VDS = 80 V, ID = 12.8 A, VGS = 5 V
(Note 4) (Note 4)
Min.
100 ------
1.0 ---
----
--------
Typ.
-0.09
-----
-0.142 0.158
9.5
400 95 20
7.5 220 22 72 8.7 2.0 5.3
Max.
--1 10 100 -100
2.0 0.18 0.2
--
520 125 25
25 450 55 150 12
---
Unit
V V/°C A A nA nA
V S
pF pF pF
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.8 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 12.8 A, dIF / dt = 100 A/s
--
--
12.8
A
--
--
51.2
A
--
--
1.5
V
--
75
--
ns
-- 0.17
--
C
Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 0.87 mH, IAS = 12.8 A, VDD = 25 V, RG = 25 Ω starting TJ = 25°.C 3. ISD ≤ 12.8 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2000 Fairchild Semiconductor Corporation
2
FQP13N10L Rev. C1
www.fairchildsemi.com
FQP13N10L — N-Channel QFET® MOSFET
!
VGS Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
101
4.0 V 3.5 V
Bottom : 3.0 V
ID, Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
100 10-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.8
0.6
VGS = 5V
0.4
VGS = 10V
0.2
※ Note : TJ = 25℃
0.0
0
10
20
30
40
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
1000 800 600 400 200
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Ciss
Coss
※ Notes :
1. VGS = 0 V
Crss
2. f = 1 MHz
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Capacitance [pF]
VGS, Gate-Source V.