Document
FQP16N25 — N-Channel QFET® MOSFET
FQP16N25
N-Channel QFET® MOSFET
250 V, 16 A, 230 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
November 2013
Features
• 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A
• Low Gate Charge (Typ. 27 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
S
FQP16N25 250 16 10 64 ± 30 560 16 14.2 5.5 142 1.14
-55 to +150 300
FQP16N25 0.88 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Unit °C/W °C/W
©2000 Fairchild Semiconductor Corporation FQP16N25 Rev. C1
1
www.fairchildsemi.com
FQP16N25 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQP16N25
Top Mark FQP16N25
Package Packing Method
TO-220
Tube
Reel Size N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
250 --
ΔBVDSS Breakdown Voltage Temperature / ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C -- 0.22
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C
-- --- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA VGS = 10 V, ID = 8.0 A VDS = 50 V, ID = 8.0 A
3.0 --- 0.18 -- 18
Dynamic Characteristics
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 920 -- 190 -- 23
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge Qgs Gate-Source Charge
Qgd Gate-Drai.