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FQP16N25 Dataheets PDF



Part Number FQP16N25
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 250V N-Channel MOSFET
Datasheet FQP16N25 DatasheetFQP16N25 Datasheet (PDF)

FQP16N25 — N-Channel QFET® MOSFET FQP16N25 N-Channel QFET® MOSFET 250 V, 16 A, 230 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction.

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FQP16N25 — N-Channel QFET® MOSFET FQP16N25 N-Channel QFET® MOSFET 250 V, 16 A, 230 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. November 2013 Features • 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A • Low Gate Charge (Typ. 27 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. S FQP16N25 250 16 10 64 ± 30 560 16 14.2 5.5 142 1.14 -55 to +150 300 FQP16N25 0.88 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W ©2000 Fairchild Semiconductor Corporation FQP16N25 Rev. C1 1 www.fairchildsemi.com FQP16N25 — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQP16N25 Top Mark FQP16N25 Package Packing Method TO-220 Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted. Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 250 -- ΔBVDSS Breakdown Voltage Temperature / ΔTJ Coefficient ID = 250 μA, Referenced to 25°C -- 0.22 IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C -- --- -- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VDS = VGS, ID = 250 μA VGS = 10 V, ID = 8.0 A VDS = 50 V, ID = 8.0 A 3.0 --- 0.18 -- 18 Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 920 -- 190 -- 23 Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drai.


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