FQP19N10 | Fairchild Semiconductor
100V N-Channel MOSFET
FQP19N10
August 2000
QFET
FQP19N10
100V N-Channel MOSFET
General Des.
100V N-Channel MOSFET
FQP19N10
August 2000
QFET
FQP19N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and c.
- FQP19N10 | Fairchild Semiconductor
- 100V N-Channel MOSFET
- FQP19N10
August 2000
QFET
FQP19N10
100V N-Channel MOSFET
General Description
These N-Channel enhan.
- FQP19N10
August 2000
QFET
FQP19N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for.
- FQP19N10L | Fairchild Semiconductor
- 100V LOGIC N-Channel MOSFET
- FQP19N10L
August 2000
QFET
FQP19N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Chann.
- FQP19N10L
August 2000
QFET
FQP19N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well su.
