FQP2N60 MOSFET Datasheet

FQP2N60 Datasheet, PDF, Equivalent


Part Number

FQP2N60

Description

600V N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
Datasheet
Download FQP2N60 Datasheet


FQP2N60
FQP2N60
600V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 2.4A, 600V, RDS(on) = 4.7@VGS = 10 V
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP2N60
600
2.4
1.5
9.6
±30
140
2.4
6.4
4.5
64
0.51
-55 to +150
300
Typ Max
-- 1.95
0.5 --
-- 62.5
©2000 Fairchild Semiconductor International
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°CW
°CW
°CW
Rev. A, April 2000

FQP2N60
Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.4
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
VGS = 10 V, ID = 1.2 A
-- 3.7
VDS = 50 V, ID = 1.2 A (Note 4) -- 2.45
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 270
-- 40
-- 5
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 2.4 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 2.4 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
10
25
20
25
9.0
1.6
4.3
--
--
10
100
100
-100
5.0
4.7
--
350
50
7
30
60
50
60
11
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 2.4
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 9.6
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.4 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.4 A,
-- 180
dIF / dt = 100 A/µs
(Note 4) -- 0.72
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 45mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  2.4A, di/dt  200A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, April 2000


Features FQP2N60 April 2000 QFET FQP2N60 600V N -Channel MOSFET General Description The se N-Channel enhancement mode power fie ld effect transistors are produced usin g Fairchild’s proprietary, planar str ipe, DMOS technology. This advanced tec hnology has been especially tailored to minimize on-state resistance, provide superior switching performance, and wit hstand high energy pulse in the avalanc he and commutation mode. These devices are well suited for high efficiency swi tch mode power supply. TM Features • • • • • 2.4A, 600V, RDS(o n) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5 .0 pF) Fast switching 100% avalanche te sted Improved dv/dt capability D ! " G DS G! ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwis e noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Curren t - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP2N60 600 2.4 1.5 .
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