FQP4N20L

FQP4N20L — N-Channel QFET® MOSFET FQP4N20L N-Channel QFET® MOSFET 200 V, 3.8 A, 1.35 Ω October 2013 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control. Features 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A Low Gate Charge (Typ. 4.0 nC) Low Crss (Typ. 6.0 pF) 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Typ. Thermal Resistance, Junc...