100V N-Channel MOSFET
FQP55N10 — N-Channel QFET® MOSFET
FQP55N10
N-Channel QFET® MOSFET
100 V, 55 A, 26 mΩ
Description
This N-Channel enhance...
Description
FQP55N10 — N-Channel QFET® MOSFET
FQP55N10
N-Channel QFET® MOSFET
100 V, 55 A, 26 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
November 2013
Features
55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V, ID = 27.5 A
Low Gate Charge (Typ. 75 nC) Low Crss (Typ. 130 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating
D
GDS TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous ...
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