FQP6N60 | Fairchild Semiconductor
600V N-Channel MOSFET
FQP6N60
April 2000
QFET
FQP6N60
600V N-Channel MOSFET
General Descri.
600V N-Channel MOSFET
FQP6N60
April 2000
QFET
FQP6N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and comm.
- FQP6N60 | Fairchild Semiconductor
- 600V N-Channel MOSFET
- FQP6N60
April 2000
QFET
FQP6N60
600V N-Channel MOSFET
General Description
These N-Channel enhancem.
- FQP6N60
April 2000
QFET
FQP6N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for hi.
- FQP6N60C | Fairchild Semiconductor
- 600V N-Channel MOSFET
- FQP6N60C/FQPF6N60C
QFET
FQP6N60C/FQPF6N60C
600V N-Channel MOSFET
General Description
These N-Channe.
- FQP6N60C/FQPF6N60C
QFET
FQP6N60C/FQPF6N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These .
