FQP6P25
April 2000
QFET
FQP6P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field...
FQP6P25
April 2000
QFET
FQP6P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
TM
Features
-6.0A, -250V, RDS(on) = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability
S
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G! G
DS
TO-220
FQP Series
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D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP6P25 -250 -6.0 -3.8 -24 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
540 -6.0 9.0 -5.5 90 0.72 -55 to +150 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθCS RθJA Parameter Thermal Resistanc...